Improved Optoelectronic Properties of Nanostructured Eu Doped Bi2S3 Thin Films for the Detection of UV Light

Due to a suitable band gap and high light absorption behavior, Bi2S3 is showing major success in photo-to-current conversion applications. In this current work, the authors used low-cost nebulizer spray pyrolysis method create nano-sized pure unique Eu contents (1–5 wt.%)-loaded thin layers by taking bismuth nitrate thiourea as source materials. The parent doped films, deposited on well-cleaned glass substrate at 350 °C, were analyzed using variety of characterization approaches, including FESEM, EDS, XRD, PL, UV-Vis, I-V, describe morphologies, compositions, crystallinity, defect states, gap, photodetection capability, respectively. X-ray diffraction outcomes confirmed an orthorhombic polycrystalline structure for all concentrations, they highly oriented along (130) plane. Incorporation into host matrix improves intensity peaks, crystallite size (25 nm) was found be highest 3% film. formation nanowire-like morphology thorough field emission electron microscopy analysis, which preferred photo detectors. Upon excitation 325 nm, grown films indicated five peaks 387, 418, 439, 480, 523 All showed significant UV region, importantly, narrowing seen from 2.29 2.17 eV. Finally, current-voltage characteristics tested silver contacts electrodes. results that sample higher photocurrent characteristic, with specific detectivity (1.82 × 1010 Jones), photoresponsivity (3.88 10?1 AW?1), external quantum efficiency (125%), rapid response, well recovery speed 0.3 s 0.4 s, due effective photocarrier generation. We believe our study may provide cost-effective approach photosensor